ZnO薄膜是一种具有优良的压电、光电、气敏、压敏等性质的材料.ZnO薄膜的制备方法多样,薄膜的性质取决于不同的掺杂组分,并与制备工艺紧密相关.简述了ZnO薄膜的制备方法与基本性质与应用,分析了ZnO薄膜研究、应用与开发现状,展望了产业化发展前景.
参考文献
[1] | 陈运详 .ZnO薄膜的性能和应用[J].压电与声光,1991,13(06):63. |
[2] | 徐毓龙.氧化物与化合物半导体基础[M].西安:西安电子科技大学出版社,1991 |
[3] | 许昌昆.声表面波器件及其应用[M].北京:科学出版社,1984 |
[4] | 康昌鹤;康省五.气、湿敏感器件及其应用[M].北京:科学出版社,1998 |
[5] | 王零森.特种陶瓷[M].长沙:中南工业大学出版社,1994 |
[6] | 春山隆幸;松本直 .透明導電膜ガラスの情报械器への応用のインパクト[J].机能材料(日本),1998,18(09):23. |
[7] | 叶志镇,陈汉鸿,刘榕,张昊翔,赵炳辉.直流磁控溅射ZnO薄膜的结构和室温PL谱[J].半导体学报,2001(08):1015-1018. |
[8] | Ma T Y;Kim S H;Moon H Y et al.Substrate Temperature Dependence of ZnO Films Prepared by Ultrasonic Spray Pyrolysis[J].Journal of Applied Physics,1996,35(12):6208. |
[9] | Vanheerden JL.;Swanepoel R. .XRD ANALYSIS OF ZNO THIN FILMS PREPARED BY SPRAY PYROLYSIS[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1997(1/2):72-77. |
[10] | Ma T Y;Kim S H;Moon H Y et al.Substrate Temperature Dependence of ZnO Films Prepared by Ultrasonic Spray Pyrolysis[J].Journal of Applied Physics,1996,35(12):6208. |
[11] | 贾锐;曲风钦 等.ZnO系低压压敏薄膜的喷雾热分解法制备及膜厚对其压敏特性影响的研究[J].功能材料,1999,30(06):636. |
[12] | 李美成,陈学康,杨建平,王菁,赵连城.脉冲激光纳米薄膜制备技术[J].红外与激光工程,2000(06):31-35. |
[13] | Hirasawa H.;Nakamura S.;Suzuki Y.;Okada S.;Kondo K.;Yoshida M. .ZnO : Ga conducting-films grown by DC arc-discharge ionplating[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2001(1/4):231-236. |
[14] | Verardi P.;Gherasim C.;Ghica C.;Dinescu M.;Dinu R. Flueraru C.;Nastase N. .Scanning force microscopy and electron microscopy studies of pulsed laser deposited ZnO thin films: application to the bulk acoustic waves (BAW) devices[J].Journal of Crystal Growth,1999(3):523-528. |
[15] | WANG Xinqiang;Yang Shuren;WANG Jinzhong et al.Nitrogen doped ZnO film grown by the plasma-assisted metal-organic chemical vapor deposition[J].Journal of Crystal Growth,2001,226(06):123. |
[16] | Ye Jiandong;Gu Shulin;Zhu Shunmin et al.The growth and annealing of single crystalline ZnO films by lowpressure MOCVD[J].Journal of Crystal Growth,2002,243(08):151. |
[17] | Y. LIU;C.R. GORLA;S. LIANG .Ultraviolet Detectors Based on Epitaxial ZnO Films Grown by MOCVD[J].Journal of Electronic Materials,2000(1):69-74. |
[18] | Guo Bing;Ye Zhizhen;Wong K S .Time-resolved photoluminescence study of a ZnO thin film grown on a (100)silicon substrate[J].Journal of Crystal Growth,2003,253:252. |
[19] | Zu P.;Wong GKL.;Kawasaki M.;Ohtomo A.;Koinuma H.;Segawa Y.;Tang ZK. .ULTRAVIOLET SPONTANEOUS AND STIMULATED EMISSIONS FROM ZNO MICROCRYSTALLITE THIN FILMS AT ROOM TEMPERATURE[J].Solid State Communications,1997(8):459-463. |
[20] | Tamura K.;Saikusa K.;Osaka Y.;Makino T.;Segawa Y.;Sumiya M.;Fuke S.;Koinuma H.;Kawasaki M.;Ohtomo A. .Epitaxial growth of ZnO films on lattice-matched ScAlMgO4(0001) substrates[J].Journal of Crystal Growth,2000(0):59-62. |
[21] | Makino T.;Chia CH.;Segawa Y.;Kawasaki M.;Ohtomo A.;Tamura K. Matsumoto Y.;Koinuma H. .High-throughput optical characterization for the development of a ZnO-based ultraviolet semiconductor-laser[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2002(3/4):277-283. |
[22] | 陈汉鸿,叶志镇.ZnO薄膜的掺杂和转型的研究进展[J].半导体情报,2001(02):37-39. |
[23] | Ryu YR.;Look DC.;Wrobel JM.;Jeong HM.;White HW.;Zhu S. .Synthesis of p-type ZnO films[J].Journal of Crystal Growth,2000(1/4):330-334. |
[24] | 太田裕道;折田政宽 .透明酸化物半导体を用いた近紫外发光ダイオ-ドの开发[J].セラミツクス(日本),2001,36(04):285. |
[25] | 张德恒,王卿璞.新型半导体激光器--ZnO紫外激光器[J].物理,2001(12):741-744. |
[26] | 仁木泶;Paul Fons.半導体ゲレ-ドの酸化物单结晶薄膜[J].セラミツクス(日本),2001(36):565. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%