采用溶胶-凝胶法在铟锡氧化物(ITO)导电玻璃基底上制备了不同掺杂浓度的Cu∶ ZnO薄膜.采用X射线衍射仪和扫描电子显微镜分析了薄膜样品的晶相结构和形貌,用荧光光谱仪测量了薄膜样品的光致发光谱.结果表明:Cu∶ ZnO薄膜均为六角纤锌矿结构,呈c轴择优取向,且因压应力的存在使其晶格常数略小于未掺杂薄膜样品的晶格常数;低温和高温退火处理的薄膜样品的光致发光谱(PL)中分别观察到414 nm、438 nm的蓝光双发射峰和510 nm左右的绿光发射峰.蓝光发射峰与样品中的Vzn和Zni有关,而绿光发射峰与样品中的Vo -Zni有关.
参考文献
[1] | U. Ozgur;Ya. I. Alivov;C. Liu;A. Teke;M. A. Reshchikov;S. Dogan;V. Avrutin;S.-J. Cho;H. Morkoc .A comprehensive review of ZnO materials and devices[J].Journal of Applied Physics,2005(4) |
[2] | S. Kishwar;K. ul Hasan;G. Tzamalis;0. Nur;M. Willander;H. S. Kwack;D. Le Si Deng .Electro-optical andcathodoluminescence properties oflow temperature grown ZnO nanorods/p-GaNwhite light emitting diodes[J].Physica Status Solidi, A. Applied Research,2010(1):67-72. |
[3] | Look DC.;Claftin B. .P-type doping and devices based on ZnO[J].Physica status solidi, B. Basic research,2004(3):624-630. |
[4] | Walukiewicz W.Defects and Self-Compensation in Semiconductors (86):46-48[M].USA:Springer Berlin Heidelberg |
[5] | Lima S A M;Davolos M R;Legnani C et al.Low Voltage Electroluminescence of Terbium-and Thulium-doped Zinc Oxide Films[J].Journal of Alloys and Compounds,2006,418(1-2):35-48. |
[6] | Lima SAM;Cremona M;Davolos MR;Legnani C;Quirino WG .Electroluminescence of zinc oxide thin-films prepared via polymeric precursor and via sol-gel methods[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2007(2/4):165-169. |
[7] | Vanheusden K;Seager C H;Warren W L et al.Correlation between Photoluminescence and Oxygen Vacancies in ZnO Phosphors[J].Applied Physics Letters,1995,68(03):403-405. |
[8] | Look D C;Reynolds D C;Fang Z Q et al.Point Defect Characterization of GaN and ZnO[J].Materials Science and Engineering B:Solid-state materials for advanced technology,1999,66(1-3):30-32. |
[9] | Q.P. Wang;D.H. Zhang;H.L. Ma;X.H. Zhang;X.J. Zhang .Photoluminescence of ZnO films prepared by r.f. sputtering on different substrates[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2003(1/4):12-18. |
[10] | 侯丽莉,马书懿,陈海霞,孟军霞,贾迎飞,陶亚明,尚小荣.不同缓冲层对ZnO薄膜的性能影响[J].人工晶体学报,2010(03):644-648. |
[11] | 胡志刚,周勋,徐明,刘方舒,段满益,吴定才,董成军,陈尚荣,吴艳南,纪红萱,令狐荣锋.Fe、Ni共掺杂ZnO薄膜的溶胶-凝胶法制备及性能研究[J].人工晶体学报,2010(01):257-261. |
[12] | 李爱侠,毕红,刘艳美,吴明在.Co,Cu共掺杂ZnO薄膜的结构及发光特性[J].发光学报,2008(02):289-293. |
[13] | 蒋敏,吴定才,魏琴,刘方舒,吴艳南,张佩佩,纪红萱,徐明.Cu掺杂ZnO薄膜的结构及发光特性[J].半导体光电,2010(02):266-269. |
[14] | 朋兴平,兰伟,谭永胜,佟立国,王印月.Cu掺杂氧化锌薄膜的发光特性研究[J].物理学报,2004(08):2705-2709. |
[15] | 吴定才,胡志刚,段满益,徐禄祥,刘方舒,董成军,吴艳南,纪红萱,徐明.Co与Cu掺杂ZnO薄膜的制备与光致发光研究[J].物理学报,2009(10):7261-7266. |
[16] | 徐彭寿,孙玉明,施朝淑,徐法强,潘海斌.ZnO及其缺陷电子结构对光谱特性的影响[J].红外与毫米波学报,2002(z1):91-96. |
[17] | XU Pengshou,Sun Yuming,Shi Chaoshu,XU Faqiang,Pan Haibin.Electronic structure of ZnO and its defects[J].中国科学A辑(英文版),2001(09):1174-1181. |
[18] | 缪世群.ZnO薄膜的光谱及能级[J].南通工学院学报(自然科学版),2003(04):25-28. |
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