用分子束外延(MBE)方法生长了InAsSb/InSb多量子阱结构,并对其进行250 ℃、8 h的退火.采用X射线光电子能谱(XPS),通过Ar离子刻蚀对样品退火前后进行了深度分析,研究退火对In、As、Sb 3种元素价态和纵向元素浓度分布的影响.结果表明,长时间低温退火增强了表面氧化,促使As和Sb元素发生次层原子向表层的扩散和样品内部该两种元素的扩散.
InAsSb/InSb muiti-quantum wells were grown by molecular beam epitaxy(MBE) and then they were annealed at 250 ℃ for 8 h. X-ray photoelectron spectrum was used to study the influence of annealing on the valences and atoms distribution of In, As and Sb by Ar ion bombardment. The results show that: after annealing, the oxidation of the elements is intensified; As and Sb of the subsurface diffuse to the surface and the ones of the inner layers also diffuse to each other.
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