用分子动力学方法模拟不同晶向单轴加载过程中,单晶铝中微纳米孔洞(约1.6 nm)的生长及周围区域的变形过程.为研究晶向对孔洞生长的影响,对具有相同初始孔洞体积分数的两个晶向进行拉伸加载,并对不同温度影响进行研究.结果表明:A晶向(x-[100],y-[010],z-[001])的形变机制主要是{111}晶面部分位错引起的堆垛层错,B晶向(x-[110],y-[111],z-[112])主要是位错的移动与堆积；B晶向比A晶向的位错成核应力大；B晶向屈服应力比A晶向对温度敏感.
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