欢迎登录材料期刊网

材料期刊网

高级检索

纳米压印是最有希望的下一代纳米成像技术之一.基于其机械压印原理,纳米压印技术可以实现的图形分辨率超越了在别的传统技术中由光衍射或粒子束散射造成的局限.本文介绍纳米压印技术的基本原理,回顾了近期纳米压印抗蚀剂的研究进展.对影响抗蚀剂性能的主要因素进行讨论,包括玻璃化转化温度/热稳定性、粘度/平均分子量、抗蚀性能等.分别介绍了热压印和紫外压印的常见抗蚀剂材料,这些抗蚀剂的主要部分包括聚甲基丙烯酸甲酯(PMMA)、有机硅改性的聚(甲基)丙烯酸酯、聚酰胺酯、聚二甲基硅烷、聚乙烯基醚化合物、环氧树脂等,并给出这些抗蚀剂体系的优、缺点.本文还介绍了纳米压印抗蚀剂面临的主要问题,对纳米压印技术的优势和问题作了小结.

参考文献

[1] 佟军民,胡松,余国彬.下一代光刻技术[J].电子工业专用设备,2005(11):27-33.
[2] Chou S Y;Krauss P R;Renstrom P .Imprint of sub 25 nm vias and trenches in polymers[J].Applied Physics Letters,1995,67(21):3114-3116.
[3] Guo L J .Recent progress in nanoimprint technology and its applications[J].Journal of Physics D:Applied Physics,2004,37:123-141.
[4] Yu Z N;Steven J S;Schablitsky S J;Chou S Y .Nanoscale GaAs metal-semiconductor-metal photodetectors fabricated using nanoimpfint lithography[J].Applied Physics Letters,1999,74(16):2381-2383.
[5] Mingtao Li;Jian Wang;Lei Zhuang .Fabrication of circular optical structures with a 20 nm minimum feature size using nanoimprint lithography[J].Applied physics letters,2000(6):673-675.
[6] Loo Y L;Willett R L;Baldwin K W et al.Additive,nsnoscale patterning of metal films with a stamp and a surface chemistry mediated transfer process:Applications in plastic electronics[J].Applied Physics Letters,2002,81(03):562-564.
[7] Colbum M;Johnson S;Stewart M et al.Step and flash imprint lithngrsphy:a new approach to high-resolution patterning[J].Proceedings of Spie,1999,3676:379-389.
[8] M.M.Alkaisi;R.J.Blaiki;S.J.McNab .Low temperature nanoimprint lithography using silicon nitride molds[J].Microelectronic engineering,2001(0):367-373.
[9] Jun Taniguchi;Yuji Tokano;Iwao Miyamoto .Diamond nanoimprint lithography[J].Nanotechnology,2002(5):592-596.
[10] Chou S Y;Krauss P R;Renstrom P J .Imprint lithography with 25-nanometer resolution[J].Science,1996,272:85-87.
[11] Sreenivasan S;Willson C;Schumaker N .Cost of ownership analysis for patterning using step and flash imprint lithography[J].Proceedings of Spie,2002,4688:903-909.
[12] Younan Xia;George M.Whitesides .Soft lithography[J].Annual review of materials research,1998(0):153-184.
[13] 司卫华,董晓文,顾文琪.纳米压印技术的工艺和图形精度研究[J].半导体光电,2006(04):441-444.
[14] L.J. Heyderman;H. Schift;C. David;J. Gobrecht .Flow behaviour of thin polymer films used for hot embossing lithography[J].Microelectronic engineering,2000(3/4):229-245.
[15] L. J. Guo .Nanoimprint Lithography: Methods and Material Requirements[J].Advanced Materials,2007(4):495-513.
[16] GokanH;Esho S;Onishi Y .Dry etch resistance of organi materials[J].Journal of the Electrochemical Society,1983,130(01):143-146.
[17] Jian Jim Wang;Xuegong Deng;Lei Chen;Paul F Sciortino Jr.;Feng Liu;Stephen Tai;Xiaoming Liu;Anguel Nikolov;Barry J. Weinbaum .Free-Space Nano-Optical Devices and Integration: Design, Fabrication, and Manufacturing[J].Bell Labs Technical Journal,2005(3):107-127.
[18] E. K. Kim;M. D. Stewart;K. Wu;F. L. Palmieri;M. D. Dickey;J. G. Ekerdt;C. G. Willson .Vinyl ether formulations for step and flash imprint lithography[J].Journal of Vacuum Science & Technology, B. Microelectronics and Nanometer Structures: Processing, Measurement and Phenomena,2005(6):2967-2971.
[19] Chou S Y;Krauss P R;Renstrom P J .Nanoimprint lithography[J].Journal of Vacuum Science and Technology B:Microelectronics and Nanometer Structures,1996,14(06):4129-4134.
[20] Jaszewski R W;Schift H;Gobrecht J et al.Hot embossing in polymers as a direct way to pattern resist[J].Microelectronic Engineering,1998,41-42:575-578.
[21] G.Y.Jung;S.Gasnapathiappan;D.A.A.Ohlberg;D.L.Olynick;Y.Chen;W.M.Tong;R.S.Williams .Fabrication of molecular-electronic circuits by nanoimprint lithography at low temperatures and pressures[J].Applied physics, A. Materials science & processing,2004(8):1169-1173.
[22] Jung GY;Wu W;Ganapathiappan S et al.Issues on nanoimprint lithogmphywith a single-layer resist strueture[J].Applied Physics A,2005,81:1331-1335.
[23] K. Pfeiffer .NOVEL LINEAR AND CROSSLINKING POLYMERS FOR NANOIMPRINTING WITH HIGH ETCH RESISTANCE[J].Microelectronic engineering,2000(1/4):411-414.
[24] Gaboriau F;Peignon M C;Barreau A et al.High density fluorocarbon plasma etching of new resists suitable for nano-imprint lithngraphy[J].Microelectronic Engineering,2000,53:501-505.
[25] Schulz H.;Hoffmann T.;Torres CMS.;Pfeiffer K.;Bleidiessel G.;Grutzner G.;Cardinaud C.;Gaboriau F.;Peignon MC.;Ahopelto J. Heidari B.;Scheer HC. .New polymer materials for nanoimprinting[J].Journal of Vacuum Science & Technology, B. Microelectronics and Nanometer Structures: Processing, Measurement and Phenomena,2000(4):1861-1865.
[26] A.Lebib;M.Natali;S.P.Li .Control of the critical dimension with a trilayer nanoimprint lithography procedure[J].Microelectronic engineering,2001(0):411-416.
[27] Lebib A;Chen Y;Cambrila E et al.Room-temperature and low-pressure nanoimprint lithography[J].Microelectronic Engineering,2002,61-62:371-377.
[28] Choi P;Fu PF;Guo LJ .Siloxane copolymers for nanoimprint lithography[J].Advanced functional materials,2007(1):65-70.
[29] Lee H;Hong S;Yang K .Fabrication of 100 nm metal lines on flexible plastic substrate using ultraviolet curing nanoimprint lithography[J].Applied Physics Letters,2006,88:1431121-1431123.
[30] Montague MF;Hawker CJ .Secondary patterning of UV imprint features by photolithography[J].Chemistry of Materials: A Publication of the American Chemistry Society,2007(3):526-534.
[31] Johnson S C .Step and flash imprint lithography:Materials and process development(Doctoral dissertation)[D].Austin:The University of Texas,2005.
[32] Eui Kyoon Kim;John G. Ekerdt;C. Grant Willson .Importance of evaporation in the design of materials for step and flash imprint lithography[J].Journal of Vacuum Science & Technology, B. Microelectronics and Nanometer Structures: Processing, Measurement and Phenomena,2005(4):1515-1520.
[33] Xudi wang;Yifang Chen;Shahanara Banu;Hywel Morgan;Shaojun Fu;Zheng Cui .High density patterns fabricated in SU-8 by UV curing nanoimprint[J].Microelectronic engineering,2007(5/8):872-876.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%