欢迎登录材料期刊网

材料期刊网

高级检索

使用湿腐蚀法即氢氟酸和硝酸的混合酸(体积比为3:1),于100℃对所制备的具有周期性孪晶结构的碳化硅纳米线进行腐蚀,采用SEM、HRTEM、FTIR、PL对所得的样品进行表征,并讨论了纳米线腐蚀的反应机理.结果表明,混合酸对具有周期性孪晶结构纳米线的腐蚀具有选择性,形成了不同于原材料的特殊形貌.同时,腐蚀改变了纳米线的光致发光性能.

参考文献

[1] Xia Y A;Yang P D;Sun Y G .One-dimensional nanostructures:Synthesis,characterization,and applications[J].Advanced Materials,2003,15:353.
[2] Shen GZ;Bando Y;Ye CH;Liu BD;Golberg D .Synthesis, characterization and field-emission properties of bamboo-like beta-SiC nanowires[J].Nanotechnology,2006(14):3468-3472.
[3] Zhang D Q;Alkhateeb A;Han H M et al.Silicon carbide nanosprings[J].Nano Letters,2003,3:983.
[4] Hao Y J;Jin G Q;Han X D et al.Synthesis and characterization of bamboo-like SiC nanofibers[J].Materials Letters,2006,60:1334.
[5] Hao Y J;Wagner J B;Su D S et al.Beaded SiC nanochains via carbothermal reduction of carbonaceous silica xerogel[J].Nanotechnology,2006,17:2870.
[6] Wei J;Li KZ;Li HJ;Fu QG;Zhang L .Growth and morphology of one-dimensional SiC nanostructures without catalyst assistant[J].Materials Chemistry and Physics,2006(1):140-144.
[7] Shot J S;Osgood R M;Kurtz A D .Photoelectrochemical conductivity selective etch stops for SiC[J].Applied Physics Letters,1992,60:1001.
[8] Lauermann I.;Meissner D.;Memming R. .ELECTROCHEMICAL PROPERTIES OF SILICON CARBIDE[J].Journal of the Electrochemical Society,1997(1):73-80.
[9] Haberer E D;Chen C H;Abate A et al.Channeling as a mechanism for dry etch damage in GaN[J].Applied Physics Letters,2000,76:3941.
[10] Goknur Z C;Gleb N Y;Yury G et al.Anisotropic etching of SiC whiskers[J].Nano Letters,2006,6:548.
[11] Wang DH;Wang DQ;Hao YJ;Jin GQ;Guo XY;Tu KN .Periodically twinned SiC nanowires[J].Nanotechnology,2008(21):215602-1-215602-7-0.
[12] Liang CH.;Zhang LD.;Wu YC.;Cui Z.;Meng GW. .Large-scale synthesis of beta-SiC nanowires by using mesoporous silica embedded with Fe nanoparticles[J].Chemical Physics Letters,2000(3-4):323-328.
[13] Lee M K;Peng K R .Blue emission of porous silicon[J].Applied Physics Letters,1993,62:3159.
[14] Morales A M;Lieber C M .A laser ablation method for the synthesis of crystalline semiconductor nanowires[J].Science,1998,279:208.
[15] Lutsenko V G .Technical silicon carbide powder particle phase composition and morphology[J].Powder Metallurgy and Metal ceramics,1993,32:199.
[16] Shor JS.;Grimberg I.;Weiss BZ.;Osgood RM.;Kurtz AD. .DOPANT-SELECTIVE ETCH STOPS IN 6H AND 3C SIC[J].Journal of Applied Physics,1997(3):1546-1551.
[17] Weyher J L;Lazar S;Borysiuk J et al.Defect-selective etching of SiC[J].Physical Status Solidi A Applied Research,2005,202:578.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%