(Pb0.90La0.10)Ti0.975O3/LaNiO3薄膜的射频磁控溅射制备和性能研究

功能材料, 2007, 38(3): 351-353.

(Pb0.90La0.10)Ti0.975O3/LaNiO3薄膜的射频磁控溅射制备和性能研究

吴家刚 ^1, , 朱基亮 ^2, , 肖定全 ^3, , 朱建国 ^4, , 谭浚哲 ^5, , 张青磊 ^6,

1.四川大学,材料科学系,四川,成都,610064

2.四川大学,材料科学系,四川,成都,610064

3.四川大学,材料科学系,四川,成都,610064

4.四川大学,材料科学系,四川,成都,610064

5.四川大学,材料科学系,四川,成都,610064

6.四川大学,材料科学系,四川,成都,610064

基金项目: 国家自然科学基金(50132020) 国家重点基础研究发展计划(973计划)(Z0601)

关键词： (Pb090La010)Ti0975O3(PLT) , 铁电薄膜 , 射频磁控溅射 , LaNiO3 , 剩余极化

Fabrication and properties of (Pb0.90La0.10)Ti0.975O3/LaNiO3 thin filmsprepared by RF magnetron sputtering

采用射频磁控溅射技术,以LaNiO3(LNO)作为过渡层,在SiO2/Si(100)、Pt(111)/Ti/SiO2/Si(100)衬底上分别获得了(100)、(110)取向的(Pb0.90La0.10)Ti0.975O3(PLT)铁电薄膜.研究了LNO/Pt(111)/Ti/SiO2/Si(100)和LNO/SiO2/Si(100)基底对PLT薄膜微结构和铁电性能的影响.实验结果表明,与在LNO/Pt(111)/Ti/SiO2/Si(100)基底上沉积的(110)取向的PLT薄膜相比较,在LNO/SiO2/Si(100)基底上沉积的高度(100)取向的PLT薄膜具有更好的微结构和更高的剩余极化强度,其2Pr为40.4μC/cm2.

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