使用导模法生长了宽度25 mm,长度100 mm的氧化镓(β-Ga2O3)单晶.晶体外观完整、无色、无开裂,粉末XRD测试证明所获得的晶体为β相,晶体摇摆曲线半峰宽为93.6",峰形对称,说明晶体质量良好.测试了未掺杂晶体的紫外透过光谱,并推算了晶体的禁带宽度为4.77 eV.此外,还重点讨论了晶体放肩时的工艺参数对晶体质量的影响.
High quality β-Ga2O3 single crystal with 25 mm in width and 100 mm in length were grown by edge-defined film-fed growth (EFG) method.The crystal apperance complete,colorless,no cracking.Powder X-ray diffraction demonstrated that the obtained crystal is β phase.High-resolution X-ray diffraction showed a full-width at half-maximum (FWHM) of the rocking curve of 93.6",indicating a high crystal quality.The ultraviolet absorption spectrum was investigated and the bandgap was estimated to be 4.77 eV.Furthermore,the effect of shouldering processing parameters on crystal quality was also discussed.
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