研究了在被膜过程中表面活性处理及掺杂对聚合物片式钽电容器容量、耐压、等效串联电阻（ESR）等特性的影响。研究结果表明表面活性处理后可以有效改善Ta2O5/PEDOT界面间的匹配,提高电容器容量引出效率;通过添加中间阻隔层（硅烷偶联剂）可以有效地阻挡杂质氧化性离子进入介质膜Ta2O5层,降低聚合物片式钽电容器的漏电流,提高耐压特性;实验结果表明在掺杂剂溶液的浓度为3%,补形成电压为赋能电压的70%时,能有效降低电容器ESR及漏电流。
In this paper, optimal fabrication process of cathode film deposition for polymer cathode tantalum capacitor was investigated. The influence of surface active treatment of Ta2O5 film and the doping of polymer film on capacitor electrical performance, such as capacitance, anti-voltage endurance ability, and equivalent series resistance （ESR） were investigated in detail. The results showed that better matching between Ta2O5 film and PEDOT polymer layer occurred after an active treatment of Ta2O5 surface, which resulted in an improved extraction capacitance of tantalum capacitors. It was also found that an addition of isolated layer （BEST layer） between Ta205 film and PEDOT polymer layer can prevent the impurity ion from penetrating into Ta2O5 film effectively, and the obtained tantalum capacitor exhibited better anti-voltage endurance ability. Moreover, the resuits showed that a 3% of mass ratio of doping solution and a repairing voltage to Ta2O5 film-forming voltage about 70% can effectively reduce the ESR and leakage current of obtained polymer cathode tantalum capacitors.
参考文献
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| [2] | 葛萌,徐建华,杨亚杰,蒋亚东,陈光铧.有机片式固体钽电解电容器制备工艺研究[J].材料导报,2009(12):85-88. |
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