We use only nitrogen as the reaction gas to deposit on the cleaned Si wafer an extra-thin Si nitride film (similar to 40 Angstrom) by electron cyclotron resonance method. Electroluminescence (EL) with its peak wavelength at about 7000 Angstrom from the semitransparent Au/extra-thin Si nitride film/p-Si structure has been detected. The effects of forward bias and annealing on the EL have been studied. (C) 1996 American Institute of Physics.
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