采用恒电流的电化学技术,在高纯金属钼基体上直接制备了白钨矿结构的CaMoO4薄膜;其制备条件为:电流密度0.5mA/cm2,饱和Ca(OH)2溶液的pH值12.0,反应温度70℃,电化学沉积时间250min.X射线衍射(XRD)、X射线光电子能谱(XPS)和扫描电镜(SEM)分析测试表明,所制备的薄膜为表面均匀致密的四方晶系的CaMoO4单相多晶薄膜.
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