以自制MgxZn1-xO:Al陶瓷为靶材,采用磁控溅射工艺在石英玻璃衬底上制备了MgxZn1-xO:Al紫外透明导电薄膜,研究了Mg掺杂量和退火温度对MgxZn1-xO:Al薄膜结构和光电性能的影响.X射线衍射表明,在x≤0.4的范围内,MgxZn1-xO:Al薄膜为六角纤锌矿结构,当x≥0.6时,MgxZn1-xO:Al薄膜为立方结构.当x≤0.4时,随着x值的增加,薄膜的电阻率有所增加,但其光学吸收边产生明显的蓝移,禁带宽度显著增大,透射光谱扩展到紫外区域.退火对薄膜电阻率影响显著,随着退火温度的增加,样品的电阻率先大幅度降低,后有略微的回升,600 ℃时电阻率最低,且吸收边较未退火时有一定的蓝移.
参考文献
| [1] | Orita M;Hiramatsu H;Ohta H .Deep-UV Transparent β-Ga2O3 Thin Films at Low Temperature[J].Thin Solid Films,2002,411:134-139. |
| [2] | Koike K;Hama K;Nakashima I;Takada G;Ogata K;Sasa S;Inoue M;Yano M .Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (111)-oriented Si substrate toward UV-detector applications[J].Journal of Crystal Growth,2005(1/4):288-292. |
| [3] | Ohtomo A.;Koida T.;Masubuchi K.;Koinuma H.;Sakurai Y. Yoshida Y.;Yasuda T.;Segawa Y.;Kawasaki M. .MgxZn1-xO as a II-VI widegap semiconductor alloy[J].Applied physics letters,1998(19):2466-2468. |
| [4] | Yang W.;Hullavarad SS.;Nagaraj B.;Takeuchi I.;Sharma RP.;Venkatesan T.;Vispute RD.;Shen H. .Compositionally-tuned epitaxial cubic MgxZn1-xO on Si(100) for deep ultraviolet photodetectors[J].Applied Physics Letters,2003(20):3424-3426. |
| [5] | S. Choopun;R. D. Vispute;W. Yang;R. P. Sharma;T. Venkatesan;H. Shen .Realization of band gap above 5.0 eV in metastable cubic-phase Mg_(x)Zn_(1-x)O alloy films[J].Applied physics letters,2002(9):1529-1531. |
| [6] | Minemoto T.;Nishiwaki S.;Takakura H.;Hamakawa Y.;Negami T. .Preparation of Zn1-xMgxO films by radio frequency magnetron sputtering[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2000(1/2):173-176. |
| [7] | Cohen DJ;Ruthe KC;Barnett SA .Transparent conducting Zn1-xMgxO :(Al,In) thin films[J].Journal of Applied Physics,2004(1):459-467. |
| [8] | S. Cornelius;M. Vinnichenko;N. Shevchenko;A. Rogozin;A. Kolitsch;W. Moller .Achieving high free electron mobility in ZnO:Al thin films grown by reactive pulsed magnetron sputtering[J].Applied physics letters,2009(4):042103-1-042103-3-0. |
| [9] | Burhan Bayraktaroglu;Kevin Leedy;Robert Bedford .High temperature stability of postgrowth annealed transparent and conductive ZnO:Al films[J].Applied physics letters,2008(2):022104-1-022104-3-0. |
| [10] | Wang H;Xu J W;Ren M F et al.Room Temperature Deposition and Properties of ZnO:Al Thin Films[J].Journal of Materials Science:Materials in Electronics,2008,19(11):1135-1139. |
| [11] | 董建华 .透明导电In2O3:Sn和ZnO:Al薄膜的制备及其特性研究[D].重庆:重庆大学,2002. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%