介绍了用于外延生长Ⅲ-V族化合物薄膜的原子层外延(ALE)的国内外进展.以GaAs为例,讨论了ALE生长Ⅲ-V族化合物的表面反应机理.GaAs的ALE表面反应机理主要有两种:一种是吸附质阻挡机理,即Ga-(CH3)3在表面发生热解,最终Ga(CH3)x(x=1或2)在表面吸附,依靠Ga(CH3)x中CH3的空间位阻效应,表面反应自动停止;另一种是选择性吸附机理,即Ga(CH3)3在表面热解后形成的吸附物质是Ga原子,当表面完全覆盖一层Ga原子,即表面Ga原子饱和,表面反应自动停止.还介绍了ALE生长中的气相反应以及H原子对ALE生长过程的影响.
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