垂直Bridgman法生长Cd1-XMnxTe晶体的缺陷研究

人工晶体学报, 2011, 40(3): 543-551.

垂直Bridgman法生长Cd1-XMnxTe晶体的缺陷研究

施凌云 ^1, , 张继军 ^2, , 王林军 ^3, , 黄健 ^4, , 唐可 ^5, , 彭兰 ^6,

1.上海大学材料科学与工程学院,上海200072

2.上海大学材料科学与工程学院,上海200072

3.上海大学材料科学与工程学院,上海200072

4.上海大学材料科学与工程学院,上海200072

5.上海大学材料科学与工程学院,上海200072

6.上海大学材料科学与工程学院,上海200072

基金项目: 上海市博士后科研资助计划项目(09R21413000) 国家自然科学基金(50902091)

关键词： Cd1-xMnxTe , 位错 , Te夹杂相 , 孪晶 , 红外透过率

Study on Defects in Cd1-xMnxTe Crystals Grown by Vertical Bridgman Method

本文采用垂直布里奇曼(Bridgman)法生长了尺寸为Φ30 mm×130mm的Cd1-xMnxTe晶体,利用Nakagawa腐蚀液显示了晶体的位错、Te夹杂相和孪晶缺陷,并采用傅立叶变换红外光谱仪研究了晶体的红外透过率与晶体缺陷之间的关系.结果表明:生长态Cd1-xMnxTe晶体的位错密度为104～105 cm-2,Te夹杂相密度为103～104cm-2,晶体中的孪晶主要为共格孪晶,孪晶面为[111]面,且平行于晶体生长方向.在入射光波数4000～500 cm-1范围,晶体的红外透过率为36.7%～55.3%,红外透过率越大,表明晶体的位错和Te夹杂相密度越低,晶体对该波长范围的红外光表现为晶格吸收和自由载流子吸收.

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