用射频溅射法在单晶硅衬底上制备了FeZrBNi/Ag/FeZrBNi三层膜, 对制备态样品进行了磁阻抗测量. 结果表明, 样品纵向和横向的最大磁阻抗比分别为18%和31%,取得最大阻抗比的频率分别为7和8 MHz; 在此频率下, 样品的纵向和横向相对磁导率比分别达到153%和5117%. 这表明掺Ni的FeZrB三层膜在制备态已具备优异的巨磁阻抗效应和软磁性能. 同时还分析了薄膜样品的电阻、电抗分量和有效磁导率随频率的变化关系.
Giant magneto-impedance (GMI) effects of FeZrBNi/Ag/FeZrBNi sandwiched films prepared by radio frequency sputtering on the substrate of single crystal Si have been measured. The maximum GMI ratios are 18% and 31% in longitudinal and transverse fields at 7 MHz and 8 MHz, respectively. Corresponding, the maximum effective susceptibility ratios are 153% (at 7 MHz) and 5117% (at 8 MHz) for longitudinal and transverse cases, respectively, indicating that the as-deposited FeZrBNi/Ag/FeZrBNi films have good sof magnetic properties and GMI effect.
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