采用机械合金化-电场激活压力辅助合成(MA-FAPAS)技术,快速合成Sc,Sb掺杂的Mg2Si基热电材料,并对其进行电性能的测试与分析.结果表明:掺杂摩尔分数为0.47％Sb的Mg2Si试样在测试温度范围内,电导率和Seebeck系数均优于未掺杂试样,其平均电功率因子约为后者的2.2～2.3倍；电导率比采用熔融-热压法制备的同类试样有所提高；在低温阶段,掺杂摩尔分数为0.43％Sc的Mg2Si试样Seebeck系数约为307 K,达未掺杂试样的2.03倍；电功率因子在温度低于550 K时高于未掺杂试样,最大值与Sb掺杂试样相当.
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