磁控溅射PtSi/p-Si纳米薄膜组织结构的研究

稀有金属材料与工程, 2003, 32(9): 707-710.

磁控溅射PtSi/p-Si纳米薄膜组织结构的研究

殷景华 ^1, , 蔡伟 ^2, , 李美成 ^3, , 赵连城 ^4,

1.哈尔滨理工大学,黑龙江,哈尔滨,150080

2.哈尔滨工业大学,黑龙江,哈尔滨,150001

3.哈尔滨工业大学,黑龙江,哈尔滨,150001

4.哈尔滨工业大学,黑龙江,哈尔滨,150001

关键词： PtSi , 薄膜 , 表面形貌 , 组织结构

Struture of PtSi/p-Si Nanometer Films Prepared by Sputtering

采用磁控溅射方法在p-Si(111)衬底上淀积5nmPt膜,分别在350℃～600℃退火.原子力显微镜(AFM)观察和X射线光电子谱(XPS)分析表明,随退火温度的增加,平坦的薄膜表面变得粗糙,其相分布由Pt-Pt2Si-PtSi变为Pt+Pt2Si+PtSi-PtSi.

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