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针对转晶法生长KDP单晶过程,进行了流动与物质输运数值模拟,以获得生长过程中晶面溶质浓度(过饱和度)的变化规律.文中展示了晶体表面浓度分布随时间的变化过程;分析了不同转速和晶体尺寸,对晶面时均浓度场的影响.结果表明,转速越快,晶体表面过饱和度越高;晶体尺寸对其表面过饱和度的大小和分布也有较大影响.此外,由于空间上不对称,Z向和Y向晶面过饱和度分布有较大差异.在晶体处于静止或低转速,自然对流可能会对晶体表面的过饱和度分布产生影响.

参考文献

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