采用脉冲激光淀积(PLD)法在单晶Si(100)衬底上淀积了ZnO薄膜.XRD、TEM和AFM分析表明,淀积的ZnO薄膜具有良好的c轴取向性和表面平整度.通过改变淀积气氛或在纯氧中高温退火,ZnO薄膜的电阻率提高到107Ω@cm.这些结果表明,用PLD法淀积的ZnO薄膜能够满足声表面波(SAW)器件的需要.
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