本文研究了BiNbO4粉料合成温度及烧结助剂CuO-V2O5添加程序对BiNbO4陶瓷烧结特性及微波介电性能的影响．结果表明：合成温度为850℃／2h及合成后加入烧结助剂CuO-V2O5的BiNbO4陶瓷有高的密度值、较为均匀的晶粒尺寸及良好的介电性能：在100MHz，εr＝49～52，在3GHz，εr＝44，Q＝2000～2300，τr＝38ppm（-40～25℃）；τr＝±6ppm（25～85℃）．
The influences of synthesizing process and CuO-V2O5 doping sequence on the sintering behaviour and dielectric properties were investigated. The experimental results indicate that BiNbO4ceramic prepared from the powder synthesized at 850℃ for 2h and doped with CuO-V2O5 thereafter possesses more homogenious grain size and high bulk density. The dielectric properties of the ceramic are εr = 49~52, tan δ≤0.001 (100MHz), εr = 44, Q = 2000~2300 (3GHz), τf = 38ppm(-40~25℃), τf = 16ppm(25~85℃).
参考文献
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