光退火制备多晶硅薄膜的量子态现象

人工晶体学报, 2008, 37(5): 1195-1198.

光退火制备多晶硅薄膜的量子态现象

靳瑞敏 ^1, , 罗鹏辉 ^2, , 陈兰莉 ^3, , 郭新峰 ^4, , 卢景霄 ^5,

1.南阳理工学院,南阳,473004;郑州大学材料物理教育部重点实验室,郑州,450052

2.南阳理工学院,南阳,473004

3.南阳理工学院,南阳,473004

4.南阳理工学院,南阳,473004

5.郑州大学材料物理教育部重点实验室,郑州,450052

关键词： PECVD法 , 非晶硅薄膜 , 光退火 , 量子态 , 晶粒大小

Quantum States in Fabricating Poly-Si Thin Film by Rapid Thermal Annealing

JIN Rui-min ^1, , LUO Peng-hui ^2, , CHEN Lan-li ^3, , GUO Xin-feng ^4, , LU Jing-xiao ^5,

1.南阳理工学院,南阳,473004;郑州大学材料物理教育部重点实验室,郑州,450052

2.南阳理工学院,南阳,473004

3.南阳理工学院,南阳,473004

4.南阳理工学院,南阳,473004

5.郑州大学材料物理教育部重点实验室,郑州,450052

Keywords： PECVD , a-Si: H film , rapid thermal annealing , quantum states , grain size

用PECVD法直接沉积的非晶硅(a-Si:H)薄膜在中温情况下光退火,然后用XRD、Raman光谱和SEM分析,发现晶粒大小随退火温度和退火时间呈现量子态现象.平均晶粒大小为30nm左右.

Amorphous silicon films prepared by PECVD on glass substrate has been crystallized by rapidthermal annealing (RTA), from X-ray diffraction (XRD), micro-Raman scattering and scanningelectronic microscope (SEM), the quantum states in these processions is found and discussed. Anaverage grain size of 30 nm or so is obtained.

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[6]	JIN Rui-min;LU Jing-xiao;LI Rui;WANG Hai-yan;FENG Tuan-hui .Solid-phase Crystallization of Amorphous Silicon Films by Rapid Thermal Annealing[J].Semiconductor photonics and technology,2005(1):37-39.

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