采用电场和常规退火以及织构分析(ODF分析)技术,对高纯铝箔再结晶织构的形成及演变规律进行了研究,结果表明电场作为一种重要的势能场对金属的微观结构具有一定的影响.电场退火可以显著地降低高纯铝箔的再结晶温度,平均降低了50～70℃,扩大了形成强立方织构的再结晶温度范围,提高了再结晶立方织构的强度,但未改变其再结晶织构的形成机制及演变规律.
参考文献
| [1] | 电流对高纯铝箔交流电侵蚀的影响[J].中国有色金属学报,1999(03):582. |
| [2] | Fe杂质对高纯铝箔再结晶织构及比电容的影响[J].中国有色金属学报,1999(01):19. |
| [3] | 曹富荣;段日瑚;吴庆龄 .国产及进口高压电容器铝箔的电子显微研究[J].电子元件与材料,1996,4:52. |
| [4] | Sprecher A F;Mannan S L;Canrad H .On the mechanisms for the electroplastic effect in metals[J].Acta Materialia,1986,34:1145. |
| [5] | 梁志德;徐家桢;王福.Determination of ODF Polycrystalline Meterials from Incomplete Pole Figures[A].Tokyo,1981:1259. |
| [6] | Baker J B;Betty B B;Moore H F .Creep and fracture tests on single crystals of lead[J].Transactions AIME,1938,128:118. |
| [7] | Dunn C G;Bolon R B et al.A scanning electyon microscope study of etched aluminum foil for electrolytic capacitors[J].Journal of the Electrochemical Society,1971,118:381. |
| [8] | Vatne H E;Daaland O;Nes E .[J].Materials Science Forum,1994,157-162:1087. |
| [9] | Duggan B J;Lee C S .Deformation banding original grain size and recrystallization in FCC intermediate-to-high sfe metals[J].Scripta Metallurgica et Materialia,1992,27:1503. |
| [10] | Hutchinson B .Nucleation of recrystallization[J].Scripta Metallurgica et Materialia,1992,27:1471. |
| [11] | Balluffi R W.Grain boundary structure and kinetics[J].Milwoukee Am Soc Metals,1979 |
| [12] | Hao An-lu;Conrad H .Influence of an electric chdrge during quench aging of a low-carbon steel[J].Applied Physics Letters,1991,59(15):1847-1849. |
| [13] | 崔国文.表面与界面[M].北京:清华大学出版社,1990:124. |
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