运用正交设计,对CdZnTe晶体生长用高纯石英坩埚内壁镀膜过程中的镀膜温度、镀膜时间、气体流量、冷却时间四个因素进行了研究和优化.用金相显微镜,扫描电镜观察分析了不同镀膜工艺条件下得到的碳膜表面形貌,用WS-2005自动划痕仪对碳膜与石英管壁之间的结合力进行了测试.实验结果表明,镀膜温度对碳膜质量影响最为显著,其次是镀膜时间,再次为冷却时间,而气体流量对碳膜质量的影响甚小.镀膜工艺的优化参数:镀膜温度为1010 ℃,气体流量为6 L/h,镀膜时间为4 h,冷却时间为18 h.该工艺参数得到的碳膜较为均匀,且与石英管壁结合强度高.
参考文献
| [1] | 张国栋,刘俊成,李蛟.坩埚内壁碳膜对Bridgman法生长CdZnTe晶体热应力的影响[J].金属学报,2007(10):1071-1076. |
| [2] | Rosch W;Carlson F .Computed Stress Fields in GaAs During Vertical Bridgman Growth[J].Journal of Crystal Growth,1991,109:75. |
| [3] | Huang C E;Elwell D;Feigelson R S .Computation of stress in Bridgmancrystal[J].Journal of Crystal Growth,1984,69:275. |
| [4] | Shimizu A.;Nishizawa J.;Oyama Y.;Suto K. .InP melts: investigation of wetting between boat materials in Bridgman growth[J].Journal of Crystal Growth,2002(Pt.3):1697-1700. |
| [5] | Butler J F;Doty F P;Apotovsky B et al.Gamma and X-ray Detectors Manufactured from Cd1-xZnxTe Grown by a High Pressure Bridgman Method[J].Materials Science and Engineering B:Solid State Materials for Advanced Technology,1993,16:291-295. |
| [6] | Pfeiffer M;Muhlberg M .Interface Shape Observation and Calculation in Crystal growth of CdTe by the Vertical Bridgman Method[J].Journal of Crystal Growth,1992,118:269-276. |
| [7] | Brunet P;Katty A;Schneider D et al.Horizontal Bridgman Growth of Large High Quality Crystals[J].Materials Science and Engineering B:Solid State Materials for Advanced Technology,1993,16:44-47. |
| [8] | 杨戈 .Cd<,1-x>Zn<,x>Te晶体生长工艺研究及退火掺杂[D].西北工业大学,2004. |
| [9] | 曾令可;叶卫平.计算机在材料科学与工程中的应用[M].武汉:武汉理工大学出版社,2004:1-5. |
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