(La,Pr)2/3Sr1/3MnO3薄膜激光诱导电阻效应

功能材料, 2006, 37(9): 1395-1397.

(La,Pr)2/3Sr1/3MnO3薄膜激光诱导电阻效应

赵省贵 ^1, , 陈长乐 ^2, , 金克新 ^3, , 罗炳成 ^4, , 高国棉 ^5, , 陈钊 ^6, , 韩立安 ^7,

1.西北工业大学,理学院,陕西,西安,710072;西安科技大学,陕西,西安,710054

2.西北工业大学,理学院,陕西,西安,710072

3.西北工业大学,理学院,陕西,西安,710072

4.西北工业大学,理学院,陕西,西安,710072

5.西北工业大学,理学院,陕西,西安,710072

6.西北工业大学,理学院,陕西,西安,710072

7.西北工业大学,理学院,陕西,西安,710072;西安科技大学,陕西,西安,710054

基金项目: 国家自然科学基金(50331040) 国家自然科学基金(60171034)

关键词：钙钛矿薄膜 , 光诱导效应 , 电子自旋

Photo-induced effect on resistance of (La,Pr)2/3Sr1/3MnO3 thin films

研究了钙钛矿锰氧化物La2/3Sr1/3MnO3和Pr2/3Sr1/3MnO3单晶薄膜的激光诱导电阻变化特性.低温铁磁金属相,激光诱导使薄膜的电阻增大,而在顺磁绝缘相则电阻减小,同时薄膜的绝缘体-金属相变(IMT)转变温度Tp向低温方向移动.对于Pr2/3Sr1/3MnO3薄膜,当激光功率为22mW时,光致电阻相对变化的最大值约为9.6%.光诱导效应致使薄膜的电阻发生变化,并使其IMT的转变温度点向低温方向移动,主要是由于光子能激发eg向下电子的跃迁,改变体系自旋极化方向.

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