以Lanxide材料的成形工艺控制为目标,研究了SiO2表面覆盖剂在铝合金熔体直接氧化生长过程中的作用.结果表明有效促进Al2O3/Al复合材料生长的SiO2加入量为1～6 g/dm2.SiO2能够显著促使材料近平面生长,形成细化胞状晶团和提高组织均匀度;在覆盖SiO2的条件下,温度升高,生长速度加快的同时,材料宏观生长表面趋于平整,但温度过高会对组织致密度产生不利影响.
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