采用溶胶凝胶工艺,在Pt/Ti/SiO2/Si衬底制备了富钛(Ba0.6Sr0.4)TiO3(BST)薄膜和富钛梯度薄膜.利用X射线衍射(XRD)和扫描电镜(SEM)分析测定了BST的微结构和薄膜的表面形貌,研究了富钛含量和梯度结构对BST介电调谐性能的影响.结果表明富钛薄膜中析出了TiO2相,薄膜的介电常数、损耗和调谐量随着钙钛矿结构(ABO3)中A/B的增加而增加;当A/B为0.68时,有最小的介电损耗0.017;当A/B为1时,有最高的介电常数和调谐量,分别为592%和43.72%.而富钛梯度薄膜因TiO2的析出而丧失晶格不匹配应力的影响,在介电调谐性能上并没有表现出梯度薄膜的综合优异性能.
参考文献
| [1] | Carlson CM.;Parilla PA.;Perkins JD.;Ginley DS.;Kozyrev AB. Oshadchy VN.;Pavlov AS.;Rivkin TV. .Large dielectric constant (epsilon/epsilon(0)> 6000) Ba0.4Sr0.6TiO3 thin films for high-performance microwave phase shifters[J].Applied physics letters,2000(14):1920-1922. |
| [2] | Zafar S.;Chu P.;White B.;Jiang B.;Taylor D.;Zurcher P. Gillepsie S.;Jones RE. .Investigation of bulk and interfacial properties of Ba0.5Sr0.5TiO3 thin film capacitors[J].Applied physics letters,1998(22):2820-2822. |
| [3] | Chen C L;Shen J;Chen S Y et al.[J].Applied Physics Letters,2001,78:652. |
| [4] | Im J;Auciello O;Baumann P K et al.[J].Applied Physics Letters,2000,76:625. |
| [5] | Streiffer S K;Basceri C;Parker C B et al.[J].Journal of Applied Physics,1999,86:4565. |
| [6] | Pervez N K;Hansen P J;York R A .[J].Applied Physics Letters,2004,85:4451. |
| [7] | Lu S G;Zhu X H;Mak C L et al.[J].Applied Physics Letters,2003,82:2877. |
| [8] | Zhu X H;Chong N;Wah H et al.[J].Applied Physics Letters,2002,80:3376. |
| [9] | Saha S;Krupanidhi S B .[J].Applied Physics Letters,2001,79:111. |
| [10] | Jain M;Majumder S B;Katiyar R S et al.[J].Applied Physics Letters,2003,82:1911. |
| [11] | Stemmer S;Streiffer S K;Browning N D et al.[J].Applied Physics Letters,1999,74:2432. |
| [12] | Jia Q X;Park B H;Gibbons B J et al.[J].Applied Physics Letters,2002,81:114. |
| [13] | Zhong W L;Wang Y G;Zhang L P .[J].Ferroelect Rev,1998,1:131. |
| [14] | Yamamichi H;Yabuta H;Sakuma T et al.[J].Applied Physics Letters,1994,64:1644. |
| [15] | Stemmer S;Streiffer S K;Browning N D et al.[J].Applied Physics Letters,1999,74:2432. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%