采用溶胶-凝胶法在玻璃基片上制备掺镓氧化锌透明导电薄膜,用X射线衍射仪、扫描电子显微镜、紫外可见光分光光度计、霍尔效应仪等测试分别表征GZO薄膜的晶体结构、表面形貌、光电性能等,研究Ga掺杂量对GZO薄膜性能的影响.结果表明:所制备的GZO薄膜均为六方纤锌矿结构并有沿c轴择优生长趋势,随着Ga掺杂量的增加,薄膜透过率先增加再减小,当Ga掺杂量为4at％时透过率最高,可见光区平均透过率达97.4％,薄膜电阻率则随掺杂量增加而下降,在Ga掺杂量为5at％时达最小值7.62×10-3 Q·cm.
参考文献
| [1] | 李倩;王万晶;李喜峰;张建华;吕建国.溶胶凝胶法制备ZnO：Ga作为电流扩散层的LED光电性能研究[J].功能材料与器件学报,2012(3):238-242. |
| [2] | Chen, Shuqun;Warwick, Michael E. A.;Binions, Russell.Effects of film thickness and thermal treatment on the structural and opto-electronic properties of Ga-doped ZnO films deposited by sol-gel method[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2015:202-209. |
| [3] | H. J. Ko;Y. F. Chen;S. K. Hong.Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy[J].Applied physics letters,200023(23):3761-3763. |
| [4] | 高珊;谷景华;张跃.溶剂热法制备铝掺杂的氧化锌透明导电薄膜[J].无机化学学报,2010(1):55-60. |
| [5] | 郭美霞.铝钛共掺杂氧化锌透明导电薄膜的制备与性能研究[J].液晶与显示,2011(02):161-164. |
| [6] | 钟志有;顾锦华;孙奉娄;杨春勇;侯金.镓掺杂氧化锌透明导电薄膜的制备及其性能研究[J].人工晶体学报,2012(5):1337-1344. |
| [7] | 兰椿;龙路;钟志有;杨春勇;侯金.沉积温度对GZO透明导电薄膜结构和性能的影响[J].电子元件与材料,2014(8):30-33,37. |
| [8] | 王丽;方亮;吴芳;谌夏;阮海波.透明导电GZO薄膜电学和光学性能的研究进展[J].半导体技术,2012(7):522-527,543. |
| [9] | Li Qian;Li Xifeng;Zhang Jianhua.Microstructure, optical and electrical properties of gallium-doped ZnO films prepared by sol-gel method[J].Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics,2013:175-179. |
| [10] | Chien-Yie Tsay;Kai-Shiung Fan;Chien-Ming Lei.Synthesis and characterization of sol-gel derived gallium-doped zinc oxide thin films[J].Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics,20121(1):216-222. |
| [11] | Room-temperature Deposition Of Transparent Conducting Al-doped Zno Films By Rf Magnetron Sputtering Method[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,200911(11):5669-5673. |
| [12] | Cebulla R.;Ellmer K.;Wendt R..Al-doped zinc oxide films deposited by simultaneous rf and dc excitation of a magnetron plasma: Relationships between plasma parameters and structural and electrical film properties[J].Journal of Applied Physics,19982(2):1087-1095. |
| [13] | J. Mass;P. Bhattacharya;R.S. Katiyar.Effect of high substrate temperature on Al-doped ZnO thin films grown by pulsed laser deposition[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,20031(1):9-15. |
| [14] | Zheng-Zheng Li;Zhi-Zhan Chen;Wei Huang;Shao-Hui Chang;Xue-Ming Ma.The transparence comparison of Ga- and Al-doped ZnO thin films[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,201120(20):8486-8489. |
| [15] | M. Babar Shahzad;Yang Qi;Hong Lu;Xiandi Wang.A study on the Al doping behavior with sol aging time and its effect on structural and optical properties of sol-gel prepared ZnO thin films[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2013May 1(May 1):242-248. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%