用化学气相沉积法(CVD)通过碳热还原反应在Si(100)衬底上以Ag纳米颗粒为催化剂制备了糖葫芦状的SiC纳米棒.硅源为溶胶凝胶制备的SiO2,碳源为炭粉.采用X射线分析衍射仪(XRD)、扫描电镜(SEM)、透射电镜(TEM)、高分辨率透射电镜(HRTEM)、荧光光谱(PL)对产物的组成、形貌、微观结构等进行了表征.结果表明,SiC纳米棒都其有周期性的凹凸,形状貌似糖葫芦状,长度范围为300 ~ 600 nm,而直径为30~ 50 nm.纳米结构生长机制为VLS生长模式,其中Ag催化剂对其形貌起到至关重要的影响.室温下SiC纳米棒的PL发光峰与块体SiC的发光特征峰相比有蓝移.
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