欢迎登录材料期刊网

材料期刊网

高级检索

运用射频磁控溅射技术,改变氩、氮流量比(9/1 ~ 9/4)在玻璃衬底上获得ZnO∶N样品,采用XRD、紫外-可见分光光度计、傅里叶红外光谱仪及SEM对薄膜微结构和光学性能表征.结果发现∶N流量小,样品XRD峰强小,峰位不明显,紫外可见光光谱在320 ~780 nm波长区间透射率变化小;随着N流量的增加,样品XRD有(002)强单峰出现,在400 nm波长以下透射率急剧下降;当氩氮流量达到9/4,样品XRD出现双峰,紫外光透射率无明显变化.

参考文献

[1] Joseph M;Tabata H;Saeki H et al.Fabrication of the Low-resitive P-type ZnO by Codoping Method[J].Physical Review B:Condensed Matter,2001,302-303:140-148.
[2] Kazunori M;Yasushi K;Yukinbu K et al.Growth of P-type Zinc Oxide Films by Chemical Vapor Deposition[J].Japanese Journal of Applied Physics Part 2:Letters,1997,36(11A):L1453-L1455.
[3] Tuzemen S;Xiong G;Wilkinson J et al.Producation and Properties of p-n Junctions in Reactively Sputtered ZnO[J].Physica B,2001,308-310:1197.
[4] Gang Xiong;John Wilkinson;Brian Mischuck;S. Tuzemen;K. B. Ucer;R. T. Williams .Control of p- and n-type conductivity in sputter deposition of undoped ZnO[J].Applied physics letters,2002(7):1195-1197.
[5] Gang X;John Wilkinson;S Tuzemen et al.Toward a New Ultraviolet Diode Laser:Lumine and p-n Junctions in ZnO Films[J].Proceeding of SPIE-the Internationa Society for Optical Engineering,2002,4644:256-262.
[6] Joseph M;Tabata H;Saek H;Saek H et al.Fabrication of the Low-Resistive p-tyoe ZnO by Codoping Method[J].Physical Review B:Condensed Matter,2001,302-303:140-148.
[7] Lu J G;Zhang Y Z;Ye Z Z et al.Low-Resitivity,Stable P-type ZnO Thin Films Realized Using a Li-N Dual-Acceptor Doping Method[J].Applied Physics Letters,2006,88(22):222114-222116.
[8] Min-Suk Oh;Sang-Ho Kim;Tae-Yeon Seong .Growth of nominally undoped p-type ZnO on Si by pulsed-laser deposition[J].Applied physics letters,2005(12):122103-1-122103-3-0.
[9] F. X. Xiu;Z. Yang;L. J. Mandalapu;J. L. Liu;W. P. Beyermann .p-type ZnO films with solid-source phosphorus doping by molecular-beam epitaxy[J].Applied physics letters,2006(5):052106-1-052106-3-0.
[10] Zeng Y J;Ye Z Z;Xu W Z et al.Study on the Hall-Effect and Photoluminescence of N-doped ZnO Thin Films[J].Materials Letters,2007,61:41-44.
[11] Y. J. Zeng;Z. Z. Ye;W. Z. Xu;J. G. Lu;H. P. He;L. P. Zhu;B. H. Zhao;Y. Che;S. B. Zhang .p-type behavior in nominally undoped ZnO thin films by oxygen plasma growth[J].Applied physics letters,2006(26):262103-1-262103-3-0.
[12] P. Wang;NuoFu Chen;Z. G. Yin .P-doped p-type ZnO films deposited on Si substrate by radio-frequency magnetron sputtering[J].Applied physics letters,2006(15):152102-1-152102-3-0.
[13] Manoj Kumar;Tae-Hwan Kim;Sang-Sub Kim;Byung-Teak Lee .Growth of epitaxial p-type ZnO thin films by codoping of Ga and N[J].Applied physics letters,2006(11):112103-1-112103-3-0.
[14] Zeng Y J;Ye Z Z;Xu W Z et al.Dopant Souce Choice for Formation of p-type ZnO∶ Li Acceptor[J].Applied Physics Letters,2006,88(06):062107-062109.
[15] N.H. NICKEL;M.A. GLUBA .Properties of Nitrogen Molecules in ZnO[J].Journal of Electronic Materials,2011(4):440-445.
[16] Guillen C;Herrero J .High conductivity and transparent ZnO : Al films prepared at low temperature by DC and MF magnetron sputtering[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2006(2):640-643.
[17] Z.-W. Chen;S.-Y. Zhang;S. Tan;J.-G. Hou .Abnormal morphology of amorphous germanium films in contact with palladium[J].Materials Research Bulletin: An International Journal Reporting Research on Crystal Growth and Materials Preparation and Characterization,2002(5):825-831.
[18] 朱华,李翠云,莫春兰,江风益,张萌.Si衬底MOCVD生长GaN/InGaN多量子阱缺陷TEM研究[J].半导体学报,2008(03):539-543.
[19] Zhu H;Liu H W;Gao H et al.Effects of the Substrates Temperatue and Argon Oxygen Ratio on ZnO[J].Current Advances in Materials and Processes,2012,415-417:1953-1958.
[20] 朱华,刘辉文,况慧芸,冯晓炜.射频磁控溅射生长ZnO薄膜及性能研究[J].人工晶体学报,2012(01):130-135.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%