直拉硅单晶中新施主(ND)的形成不仅依赖于其氧含量,而且为碳的存在所促进;此外,原生晶体中的微缺陷也起非常重要的作用。我们求出的新施主能级分别为E_(ND)(Ⅰ)=50±5meV,E_(ND)(Ⅱ)=100±10meV(对于P 型单晶)以及E_(ND)(Ⅲ)=25meV(对于N 型单晶)。
We found that new donor(ND)generation was strongly dependent on theO_i content and promoted by the presence of a large amount of carbon atoms.In addition,microdefects in as-grown crystal also played a very importantrole in ND formatiton.There are three ki
参考文献
| [1] |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%