利用Monte Carlo方法对真空蒸发系统下的有机薄膜生长过程进行了模拟.在该系统模型中,Ns个点蒸发源均匀分布在半径为R的圆周上,基板相对蒸发源所在平面距离为d.利用该模型分析了膜厚分布以及点蒸发源个数Ns、蒸发源与基板的相对位置R和d对薄膜厚度均匀性的影响,并通过实验对仿真结果进行了验证.结果显示,增加蒸发源个数、增大相对基板位置均可以有效提高薄膜的均匀性,测试发现薄膜样品的精度MaX-Min均保持在5%左右.
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