采用镀Ti插入层在氢化物外延设各中制各了高质量自支撑GaN厚膜.X射线衍射测试发现(0002)峰摇摆曲线的半高宽为260 aresee:5K下样品带边发光峰的半高宽为3 meV,室温下样品的带边发光峰也只有20 meV,并且在室温的PL谱中观察不到黄光带;扫描电子显微镜观察显示,腐蚀后的自支撑GaN厚膜表面有位错延伸形成的六角坑,并估算出样品位错密度约为2.1×107cm-2.这些结果说明镀Ti插入层有助于提高GaN外延层的晶体质量.通过Raman和低温荧光分析,可以看出自支撑GaN厚膜表面应力已经完全释放.研究了不同温度下样品的荧光特性,证明得到的无应力自支撑GaN厚膜具有很好的晶体质量和光学质量.
参考文献
| [1] | Nakamura S;Senoh M;Nagahama S et al.[J].Applied Physics Letters,1995,67(13):1868. |
| [2] | 李镇江,李贺军,陈小龙,李克智,曹永革,李建业.低维GaN纳米材料的最新研究进展[J].稀有金属材料与工程,2002(05):321-324. |
| [3] | Porowki S;Crzegory I .[J].Journal of Crystal Growth,1997,178(02):174. |
| [4] | Inoue T.;Oda O.;Kurai S.;Yamada Y.;Taguchi T.;Seki Y. .Growth of bulk GaN single crystals by the pressure-controlled solution growth method[J].Journal of Crystal Growth,2001(1):35-40. |
| [5] | Paskova T.;Yakimova R.;Svedberg EB.;Henry A.;Monemar B.;Goldys EM. .Influence of growth rate on the structure of thick GaN layers grown by HVPE[J].Journal of Crystal Growth,2000(1/4):18-26. |
| [6] | Wei T B;Duan R F et al.[J].Applied Surface Science,2007,253(18):7423. |
| [7] | Ozgur U;Fu Y;Moon Y T et al.[J].Applied Physics Letters,2005,86(23):232106. |
| [8] | Usui A.;Ichihashi T.;Kobayashi K.;Sunakawa H.;Oshima Y.;Eri T. Shibata M. .Role of TiN film in the fabrication of freestanding GaN wafers using hydride vapor phase epitaxy with void-assisted separation[J].Physica Status Solidi, A. Applied Research,2002(2):572-575. |
| [9] | Holtz M;Seon M;Prokofyeva T et al.[J].Applied Physics Letters,1999,75(12):1757. |
| [10] | Li H D;Zhang S L;Yang H B et al.[J].Journal of Applied Physics,2002,91(07):4562. |
| [11] | Dam C;Hageman P R;Larsen P K .[J].Journal of Crystal Growth,2005,285(1-2):31. |
| [12] | Kang JY.;Shen YW.;Wang ZG. .Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2002(0):303-307. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%