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通过高温高压方法,成功地合成出了立方相(PbTe1.04)100-y(PbI2)y(0≤y≤ 0.065)体热电材料.在常温常压下,对样品的一系列电学性质进行了测试与研究.结果表明,随着掺杂量的增加,Seebeck系数的绝对值和电阻率均显著地减小.当y=0.015时,热电材料的功率因子达到最大值24.2μW/(cm·K2),它远远大于常压下合成PbTe掺杂PbI2的功率因子.以上结果说明,高温高压结合微量掺杂的方法可以有效地提高PbTe材料的电学输运性能.

参考文献

[1] Goldsmid H J.Electronic Refrigeration[M].London:Pion Limited,1986:10.
[2] Rowe D M;Bhandri C M.Modern Thermoelectrics[M].New York:Reston Publishing,1983:104.
[3] Hsu K F;Loo S;Fu Guo et al.[J].Science,2004,303:818-821.
[4] Mahan G D;Sofo J O .[J].Proceedings of the National Academy of Sciences(USA),1996,93:7436-7439.
[5] Bennett G L;Rowe D M.CRC Handbook of thermoelectrics[M].New York:crc Press,1995:515-537.
[6] Badding JV.;Polvani DA.;Meng JF. .Pressure tuning in the search for new and improved solid state materials [Review][J].Chemistry of Materials,1998(10):2889-2894.
[7] Ovsyannikov SV;Shchennikov VV .High-pressure thermopower of PbTe-based compounds[J].Physica status solidi, B. Basic research,2004(14):3231-3234.
[8] Badding JV. .High-pressure synthesis, characterization, and tuning of solid state materials [Review][J].Annual review of materials research,1998(0):631-658.
[9] Zhou J S;Archibald W;Goodenough J B .[J].Physical Review B,1998,57:R2017-R2020.
[10] Samara G A;Drickamer H G .[J].Journal of Chemical Physics,1962,37:1159-1160.
[11] Rogacheva E I;Tavrinaa T V;Nashchekinaa O N et al.[J].Thin Solid Films,2003,423:257-261.
[12] Heremans J P;Thrush C M;Morelli D T .[J].Journal of Applied Physics,2005,98:063703.
[13] Skipetrov EP.;Zvereva EA.;Volkova OS.;Slyn'ko EI.;Mousalitin AM. .On Fermi level pinning in lead telluride based alloys doped with mixed valence impurities[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2002(0):416-420.
[14] Su T;Zhu P;Ma H et al.[J].Solid State Communications,2006,138:580-584.
[15] Su T;Zhu P;Ma H et al.[J].Journal of Alloys and Compounds,2006,422:328-331.
[16] Kishimoto K;Koyanagi T .[J].Journal of Applied Physics,2002,92:2544-2549.
[17] Yoneda S.;Kaibe HT.;Ohsugi IJ.;Miyamoto K.;Nishida IA.;Ohta E. .Crystal growth of PbTe doped with PbI2 by the physical transport method[J].Journal of Crystal Growth,1999(1/2):229-232.
[18] Orihashi M;Noda Y;Kaibe H K et al.[J].Materials Transactions-Japan Institute of Metals,1998,39:672-678.
[19] Gelbstein Y;Dashevsky Z;Dariel MP .High performance n-type PbTe-based materials for thermoelectric applications[J].Physica, B. Condensed Matter,2005(1/4):196-205.
[20] Shen Q;Zhang L;Li J .[J].Journal of Materials Science and Technology,1999,15:483-485.
[21] Ma H A;Su T;Zhu P W et al.[J].Journal of Alloys and Compounds,2007,438:263-267.
[22] Rousse G;Klotz S;Saitta A M et al.[J].Physical Review B,2005,71:224116.
[23] Mahan G D .[J].Solid-State Physics,1998,51:81-157.
[24] Schluter M;Martinez G;Cohen M L .[J].Physical Review B,1975,12:650-658.
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