采用真空蒸镀法制备厚度400～2100 nm、表面均方根粗糙度Rq＜6.0 nm的Be薄膜.XRD结果表明不同厚度Be薄膜均由hcp结构的(aBe)相组成.当蒸发温度从1243 K增加至1403 K时,Be原子沉积速率急剧增大,α-Be晶粒平均直径增大近3倍,其择优取向发生显著改变.薄膜表面小岛由不规则的多边形晶粒逐渐转化为棱角分明的六边形晶粒,而横截面形貌始终以柱状晶生长为主,它垂直于基片呈定向排列.此外,理论计算的Be薄膜生长速率与实验测定的结果十分吻合,它与平衡蒸气压成正比,随蒸发温度的升高而呈指数函数关系增大.
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