用磁控溅射法制备了Ge-Sb-Te和Ge-Sb-Te-O相变材料薄膜,由热处理前后薄膜的X射线衍射(XRD)发现,热处理使薄膜发生了从非晶态到晶态的相变.通过非晶态薄膜粉末的示差扫描量热(DSC)实验测出不同加热速率条件下的结晶峰温度,并计算了材料的摩尔结晶活化能、原子激活能和频率因子.根据结晶动力学结晶活化能E判据得出结论为:与Ge-Sb-Te相比,掺杂氧后的Ge-Sb-Te更容易析晶,具有更快的结晶速率.
Ge-Sb-Te and Ge-Sb-Te-O thin films were prepared by RF-sputtering. XRD spectra of the films in
as-deposited and heat-treated states show that the films changed from amorphous to crystalline states due to heat-treatment. By using DSC data
of the amorphous film materials, measuring the peak temperature of crystallization at different heating rates, the activation energies
and frequency factors were calculated. The experimental results show that sample Ge-Sb-Te-O has a higher value of activation energy than sample Ge-Sb-Te, so
oxygen-doping can improve the crystallization rate of Ge-Sb-Te phase-change material.
参考文献
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