制备性能优良、高度择优取向或外延生长、成分均匀、结构可控的晶态铁电薄膜材料,是发展铁电薄膜应用的基础.随着铁电薄膜在微电子学,光电子学和集成光学等领域的应用不断扩大,如何制备高性能的铁电薄膜材料一直称为人们关注的热点.对择优取向铁电薄膜材料制备技术中的主要影响因素进行了分析,希望能为从事此方面工作的研究者提供一定的借鉴.
参考文献
[1] | 曲喜新.电子薄膜材料[M].北京:科学出版社,1996 |
[2] | Jooho Moon;Jeffrey A Kerchner et al.Oriented Lead Titanate Film Growth at Lower Temperatures by the SolGel Method on Particle-Seed Substrates[J].Journal of the American Ceramic Society,1997,80(10):2013. |
[3] | Yukio Watanabe et al.Crystallographicand electricalproperties of epitaxial BaTiO3 film grown on conductivean dinsulating perovskite oxides[J].Journal of Applied Physics,1994(33):5182. |
[4] | 王培英;刘梅冬 等.PZT铁电薄膜的制备及电学性能研究[J].压电与声光,1996,18(02):109. |
[5] | Ijima K;Tomita Y et al.Preparation of c-axis Orented PbTiO3 Thin Films and Their Crystallographic Dielectric and Pyroelectric Properties[J].Journal of Applied Physics,1986,60:361. |
[6] | Ogawa A Senda;Kasami .Controlling the Crystal Orientations of Lead Titanate Thin Films[J].Japanese Journal of Applied Physics,1991,30(08):2145. |
[7] | Shin ichi Hirano et al.Synthesis of Highy Oriented Zirconate-Lead-Titanate Films using metallo-organics[J].Journal of the American Ceramic Society,1992,75(10):2785. |
[8] | Liu Y;Phule P P .Nucleation-or Growth-Controlled Orientation Developmentin Chemically Derived Ferroelectric Lead Zirconate Titanate (Pb (Zrx Ti1-x O3 ) x = 0 4) Thin Film[J].Journal of the American Ceramic Society,1996,79(02):495. |
[9] | Katsuhiro Aoki et al.Dielectric properties of (111) and (100) Lead-Zirconate-Titanate Films prepared by sol-geltechnique[J].Journal of Applied Physics,1994(33):5155. |
[10] | J. Koo;H. Jang .Highly oriented (Pb,La)TiO3 thin films prepared by sol-gel process[J].Journal of Materials Science,1999(20):5075-5080. |
[11] | Laurel M Sheppard .Advances in processing of ferroelectric thin films[J].Ceramic Bulletin,1992,71(01) |
[12] | Langjahr P A et al.Epitaxial growth and structure of cubic and pseudocubic perovskite films on perovskite substrates[J].Materials Research Society Symposium Proceedings,1996,401:109. |
[13] | Bruce A Tuttle;James A Voigt et al.Highly Oriented Chemically Prepared Pb(ZrTi)O3 Thin Films[J].Journal of the American Ceramic Society,1995,76(06):1537. |
[14] | Masaru Shimizu et al.Control of orientation of Pb(ZrTi)O3 thin films using PbTiO3 buffer layer[J].Journal of Applied Physics,1994(33):5167. |
[15] | Takashi Nakamura et al.preparation of Pb (ZrTi) O3 thin films on Ir and IrO2 electrodes[J].Journal of Applied Physics,1994(33):5207. |
[16] | Jeong Hwan Park;Dong Heon Kang;Ki Hyun Yoon .Effects Heating profiles on the Orientation and Dielectric Properties of 0.5pb (Mg_(1/3)Nb_(2/3))O_3-O.5PbTiO_3 Thin Films by Chemical Solution Deposition[J].Journal of the American Ceramic Society,1999(8):2116-2120. |
[17] | Chen Chiahong;Daniel F .Sythesis and Microstructure of Highly Oriented Lead Titanate Thin Films Prepared by SolGel Method[J].Journal of the American Ceramic Society,1989,72(08):1495. |
[18] | Neurgaonkar R R et al.Garin oriented ferroelectric pzt thin films on lattice-natchedsubstrates[J].Journal of Mat Res Bull,1993,28:719. |
[19] | 何恩培;刘梅冬 等.溶胶一凝胶工艺对PZT铁电薄膜结构影响[J].压电与声光,1994,6(05):44. |
[20] | Keiichi Nashimoto et al.Preparetion and characterization of sol-gel derived epitaxial and oriented Pb (Zr0 52Ti0 48)O3 thin films[J].Journal of Applied Physics,1994(33):5147. |
[21] | Zeng Jianming .Sol-Gel Preparation of Pb(Zr_0.50Ti_0.50)O_3 Ferroelectric Thin Films Using Zirconium Oxynitrate as the Zirconium Source[J].Journal of the American Ceramic Society,1999(1/3):461-464. |
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