采用电子束沉积的方法在底衬Mo (Rq≈5～8.63 nm)上制备了厚度为2～3 μm的Sc膜,再将Sc膜在Sievert真空系统中进行吸氘.结果表明:在底衬温度为623,823,1023 K时,Sc膜呈现出柱状结构,且具有(002)的择优生长；随着沉积温度从623 K增大到1023 K,Sc膜的(002)择优生长变强,晶粒尺寸也随之增大,这与前人报道的结构区域模型(SZMs)是一致的.Sc膜经吸氘变为了ScD2膜,ScD2膜为(111)择优生长,而且随着衬底温度的升高,择优生长也随着增强,这说明了(111)晶面的ScD2晶核是由吸氘前(002)晶面的钪晶核生长而来的；高底衬温度下制备的Sc膜经吸氘后所获的ScD2膜的晶粒尺寸反而更小,这可能是由D原子在低衬底温度制备的Sc膜中较强的扩散动力学造成的.另外,提出了一种新的制备底衬材料的方法,该方法能够简单、快速的获得Sc膜的断面形貌,而且对Sc膜不会造成任何污染,且经济便宜.
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