We report the magnetotransport properties of Fe(3)Se(4) nanowire arrays in anodic aluminum oxide (AAO) porous membrane. The temperature dependence of resistance of Fe(3)Se(4) nanowires at a zero field shows thermal activated behavior below 295 K. The exponential relationship in resistance is consistent with the model of strong localization with variable-range hopping (VRH) for a finite one-dimensional wire. Resistance versus magnetic field curves below 100 K show small positive magnetoresistance (MR). The field dependencies of log[R(H)/R(0)] explain the positive MR as the effect of magnetic field on the VRH conduction. (C) 2011 American Institute of Physics. [doi:10.1063/1.3544508]
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