Study on release rate of latent heat in Czochralski silicon growth

稀有金属（英文版）, 2006, 25(z2): 51-54.

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1.School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China

2.School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China

3.School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China

4.School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China

5.School of Material Science and Engineering, Hebei University of Technology, Tianjin 300130, China

基金项目: 国家自然科学基金(60576002)

Study on release rate of latent heat in Czochralski silicon growth

Keywords： CZSi

The pulling rate in czochralski silicon (CZSi) growth is important for reducing the cost of solar cell.In this paper, double-heater, heat shield and composite argon duct system were introduced in the Ф450 mm hot zone of a Czochralski furnace.The pulling rate under different thermal system was recorded in experiments.Argon flow and temperature fields were simulated by finite element method(FEM).Experimental results and numerical simulation indicate that double-heater and composite argon duct system can enhance obviously the release rate of latent heat.In Φ 200 mm Czochralski silicon (CZSi) growth, average pulling rate can increase from 0.6 mm·min-1 in the conventional hot zone to 0.8 mm·min-1 in the modified hot zone.

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Study on release rate of latent heat in Czochralski silicon growth

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