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ZnO由于具有3.4eV的宽直接禁带和60meV的高激子束缚能,近年来引起了研究者的广泛兴趣,被认为是制备室温或高温蓝光或紫外光发光二极管以及激光二极管的理想材料.ZnO的能带工程是发展高效率的ZnO发光器件的关键,这已经成为ZnO领域的研究热点.近年来,大量的研究表明,可以通过ZnO与Mgo或BeO形成MgZnO或BeZnO合金来增大ZnO的禁带宽度,通过ZnO与CdO形成CdZnO合金来减小ZnO的禁带宽度,从而在保持单一六方结构的情况下实现了室温禁带宽度在1.8~10.6eV范围内的可调节.总结了ZnO能带工程的国内外研究进展,系统地介绍了MgZnO、BeZnO和CdZnO合金、ZnO基量子阱和超晶格的制备方法、晶体结构、光学性能等.

参考文献

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