通过溶胶-凝胶法在硅基底上制备不同烧结温度(700℃、800℃、900℃)下的CaCu3 Ti4O12 (CCTO)薄膜.分别采用X射线衍射仪(XRD)和扫描电镜(SEM)对薄膜的形貌、组分和结晶状况进行表征,发现在800℃烧结温度下CCTO薄膜的结晶状况最佳.然后,采用半导体特性分析仪测试薄膜的电容-电压(C-V)特性和电流-电压(I-V)特性,得到薄膜的最大比电容和阈值电压分别为3.2.F/cm2和47 V.最后,使用台阶仪对两种浓度的先驱溶液在不同转速下所制备的薄膜厚度进行了研究.
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