场效应晶体管是现代微电子技术的重要组成部分.为制备氧化锌薄膜晶体管,分析了氧化锌的p型、n型掺杂特性,对p型掺杂进行了实验分析和理论探讨,比较了各种制备氧化锌薄膜晶体管的工艺特点,展示了ZnO在未来电子和光电子领域的潜在应用.
参考文献
[1] | Li Jia;Zhao Xiaopeng;Yan Chunmei et al.Electroluminescence of ZnO nanocrystalline particles annealed from mesoporous precursors[J].Materials Chemistry and Physics,2008,107:177. |
[2] | Di CA;Yu G;Liu YQ;Guo YL;Wang Y;Wu WP;Zhu DB .High-performance organic field-effect transistors with low-cost copper electrodes[J].Advanced Materials,2008(7):1286-1290. |
[3] | El Mir L;Ben Ayadi Z;Saadoun M;Djessas K;von Bardeleben HJ;Alaya S .Preparation and characterization of n-type conductive (Al, Co) co-doped ZnO thin films deposited by sputtering from aerogel nanopowders[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2007(2):570-573. |
[4] | Sheu J K;Chang K H;Lee M L .Ultraviolet band-pass photodetectors formed by Ga-doped ZnO contacts to n-GaN[J].Applied Physics Letters,2008,92:113512. |
[5] | Ma ZQ;Zhao WG;Wang Y .Electrical properties of Na/Mg co-doped ZnO thin films[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2007(24):8611-8614. |
[6] | Xu Weizhong;Ye Zhizhen;Zhou Ting et al.Low-pressure MOCVD growth of p-type ZnO thin films by using NO as the dopant source[J].Journal of Crystal Growth,2004,265:133. |
[7] | Wang Jinzhong;Du Guotong;Zhao Baijun et al.Epitaxial growth of NH3-doped ZnO thin films on (0224) oriented sapphire substrates[J].Journal of Crystal Growth,2003,255:293. |
[8] | Xiao ZY;Liu YC;Mu R;Zhao DX;Zhang JY .Stability of p-type conductivity in nitrogen-doped ZnO thin film[J].Applied physics letters,2008(5):52106-1-52106-3-0. |
[9] | Kyong-KooK Kim et al.Realization of p-type ZnO thin films via phosphorus doing and thermal activation of the dopant[J].Applied Physics Letters,2003,83(01):63. |
[10] | Limpijumnong S;Zhang S B;Wei Suhuai et al.Doping by large-size-mismatched impuries:The microscopic origin of arsenicor antimony-doped p-type zinc oxide[J].Physical Review Letters,2004,92(15):155504. |
[11] | Yuan Guodong et al.p-type conduction in Al-N co-doped ZnO films[J].Materials Letters,2004,58:3741. |
[12] | Ye Zhizhen;Qian Qing et al.Effect of oxy-gen partial pressure ratios on the properties of Al-N co-doped ZnO thin films[J].Journal of Crystal Growth,2005,274(1-2):178. |
[13] | Kwang-Soon Ahn;Yanfa Yan;Sudhakar Shet;Todd Deutsch;John Turner;Mowafak Al-Jassim .Enhanced photoelectrochemical responses of ZnO films through Ga and N codoping[J].Applied physics letters,2007(23):231909-1-231909-3-0. |
[14] | Tsukazaki A;Ohtomo A;Onuma T et al.Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO[J].Nature Materials,2005,5:42. |
[15] | Vande Wale C G;Laks D B;Neumark G F et al.First principles calculations of solubilities and doping limits:Li,Na,and N in ZnSe[J].Physical Review B:Condensed Matter,1993,47:9425. |
[16] | Park C H et al.Origin of p-type doping difficulty:The impurity perspective[J].Physical Review B:Condensed Matter,2002,66:073202. |
[17] | McDowell MG;Sanderson RJ;Hill IG .Combinatorial study of zinc tin oxide thin-film transistors[J].Applied physics letters,2008(1):13502-1-13502-3-0. |
[18] | Huby N;Ferrari S;Guziewicz E et al.Electric behavior of zinc oxide layers grown by low temperature atomic layer deposition[J].Applied Physics Letters,2008,92:023502. |
[19] | Donghun Kang;Hyuck Lim;Changjung Kim;Ihun Song;Jaechoel Park;Youngsoo Park;JaeGwan Chung .Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules[J].Applied physics letters,2007(19):192101-1-192101-3-0. |
[20] | Yaglioglu B;Yeom H Y;Beresford R et al.High-mobility amorphous In2O3-10wt%ZnO thin film transistors[J].Applied Physics Letters,2006,89:062103. |
[21] | Hisato Yabuta;Masafumi Sano;Katsumi Abe;Toshiaki Aiba;Tohru Den;Hideya Kumomi;Kenji Nomura;Toshio Kamiya;Hideo Hosono .High-mobility thin-film transistor with amorphous InGaZnO_(4) channel fabricated by room temperature rf-magnetron sputtering[J].Applied physics letters,2006(11):112123-1-112123-3-0. |
[22] | Martins R;Barquinha P;Ferreira I;Pereira L;Goncalves G;Fortunato E .Role of order and disorder on the electronic performances of oxide semiconductor thin film transistors[J].Journal of Applied Physics,2007(4):44505-1-44505-7-0. |
[23] | Tsay Chienyie;Cheng Huachi;Wang Minchi et al.Performance of sol-gel deposited Zn1-xMgxO films used as active channel layer for thin-film transistors[J].Surface and Coatings Technology,2007,202:1323. |
[24] | Guziewicz E;Kowalik IA;Godlewski M;Kopalko K;Osinniy V;Wojcik A;Yatsunenko S;Lusakowska E;Paszkowicz W;Guziewicz M .Extremely low temperature growth of ZnO by atomic layer deposition[J].Journal of Applied Physics,2008(3):33515-1-33515-6-0. |
[25] | David H. Levy;Diane Freeman;Shelby F. Nelson;Peter J. Cowdery-Corvan;Lyn M. Irving .Stable ZnO thin film transistors by fast open air atomic layer deposition[J].Applied physics letters,2008(19):192101-1-192101-3-0. |
[26] | Sung Hoon Cha;Min Suk Oh;Kwang H. Lee;Seongil Im;Byoung H. Lee;Myung M. Sung .Electrically stable low voltage ZnO transistors with organic/inorganic nanohybrid dielectrics[J].Applied physics letters,2008(2):023506-1-023506-3-0. |
[27] | Sang Yeol Lee;Eun Sub Shim;Hong Seong Kang et al.Fabrication of ZnO thin film diode using laser annealing[J].Thin Solid Films,2005,473:31. |
[28] | Cheng Huachi;Chen Chiafu;Tsay Chienyie .Transparent ZnO thin film transistor fabricated by sol-gel and chemical bath deposition combination method[J].Applied Physics Letters,2007,90:012113. |
[29] | Dutta, M;Mridha, S;Basak, D .Effect of sol concentration on the properties of ZnO thin films prepared by sol-gel technique[J].Applied Surface Science,2008(9):2743-2747. |
[30] | Cha S N;Jang J E;Choi Y et al.High performance ZnO nanowire field effect transistor using self-aligned nanogap gate electrodes[J].Applied Physics Letters,2006,89:263102. |
[31] | Chung J H;Lee J Y;Kim H S et al.Effect of thickness of ZnO active layer on ZnO-TFT's characteristics[J].Thin Solid Films,2008,516:5597. |
[32] | De Souza M M;Jejurikar S;Adhi K P .Impact of aluminum nitride as an insulator on the performance of zinc oxide thin film transistors[J].Applied Physics Letters,2008,92:093509. |
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