本文研究了具有SiC基底的负折射率薄膜复合体的热辐射特性.利用传输矩阵方法及基尔霍夫定律推导了复合层的热辐射特性计算公式.通过对比,分析了负折射率薄膜对SiC热辐射特性的影响.结果显示,负折射率薄膜能够显著地改变传统半导体材料的热辐射特性.通过调整薄膜结构的体系参数,还可以对复合体热辐射的方向特征和光谱特征进行相应的调制.
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