氢还原法制备低相变温度掺钨VO2薄膜

钢铁钒钛, 2010, 31(2): 6-9.

氢还原法制备低相变温度掺钨VO2薄膜

李敏娇 ^1, , 张述林 ^2, , 丁秀敏 ^3, , 罗祎 ^4, , 熊苗 ^5,

1.四川理工学院化学与制药工程学院,四川,自贡,643000

2.四川理工学院材料与化学工程学院,四川,自贡,643000

3.四川理工学院材料与化学工程学院,四川,自贡,643000

4.四川理工学院材料与化学工程学院,四川,自贡,643000

5.四川理工学院材料与化学工程学院,四川,自贡,643000

基金项目: 四川省教育厅重点科研项目(2006A167)

关键词：二氧化钒 , 薄膜 , 相变温度 , 掺钨 , 氢还原

Preparation of Tungsten-doped VO2 Thin Film with Low Phase Transition Temperature by Hydrogen Reduction Method

在钒溶胶中掺入适量聚钨酸溶胶,采用浸渍提拉法在载玻片上涂膜,涂片薄膜在氢气氛围中、在400℃温度下还原3h,制得掺钨VO2薄膜.金相显微镜观察到薄膜呈VO2的特征绿色;X荧光光谱分析得出薄膜中W、V的含量分别为3.212%和64.97%.电阻-温度曲线测试表明,VO2薄膜的相变温度为40.5℃,热滞回线宽度为△T=11℃,电阻突变量△S达到4.06个数量级.

参考文献

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材料期刊网

氢还原法制备低相变温度掺钨VO2薄膜

Preparation of Tungsten-doped VO2 Thin Film with Low Phase Transition Temperature by Hydrogen Reduction Method

参考文献