采用真空蒸镀法在Si（100）基底上制备了六角片状Zn微晶薄膜，并由N2H4·H2O-水热体系制备了Si基片状ZnO微晶薄膜。XRD、SEM及EDS测试与分析结果表明，纤锌矿结构片状Zn0微晶长度约1μm、厚度约100nm，几乎垂直于Si基面，且在基面上随机组合成连续薄膜。联系室温Si基Zn微晶薄膜氧化物形貌，以“氢氧化锌脱水”反应解释了Si基片状ZnO微晶薄膜的生长机制。光致发光谱测试分析表明，ZnO微晶薄膜有强的近带边紫外光发射和弱的缺陷发射。
The hexangular plate-like zinc micro-crystal films were deposited on silicon (100) substrates through the vacuum evaporation method and the plate-like ZnO micro-crystal films were prepared on silicon substrates by hydrothermal process with N2H4· H2O solution. The results of XRD, SEM and EDS analyses indicate that the plate-like ZnO micro-crystals with zincblende structure have a length of about 1μm and a thickness of about lOOnm, which grow almost vertically to the surface of silicon substrate and randomly assemble to form a contin- uous film. Taking account of the morphologies of oxidation product of zinc micro-crystal films on silicon sub- strates at ambient, the mechanism of zinc hydroxide dehydration is suggested to explain the formation process of the plate-like ZnO micro-crystal films on silicon substrates. The photoluminescence spectrum shows that the ZnO micro-crystal film is with a strong emission at near edge band-gap and weak emissions related to defects.
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