用分子束外延(MBE)设备以Stranski-Krastanov (S-K)生长模式,通过间歇式源中断方式外延生长了多个周期垂直堆垛的InGaAs量子点,首次获得大小及密度可调的In0.43Ga0.57As/GaAs(001)矩阵式量子点DWELL结构.样品外延结构大致为500nm的GaAs、多个周期循环堆垛InGaAs量子点和60ML的GaAs隔离层等.生长过程中用反射式高能电子衍射仪(RHEED)实时监控,样品经退火后使用扫描隧道显微镜(STM)进行表面形貌的表征.
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