Nano silicon particles can be become nano fibre under low energy electron beam bombarding. The formation of the nano silicon fibre include two stages. At first, on the nano silicon particle surface many silicon atoms are gasified, then these silicon atoms deposit in the place where have more charge on account of the static electrical absorption and the point effect of the charge accumulation , these atoms grow into non crystalline silicon fibres. The second stage is the non crystalline silicon fibres crystallizing. Its crystallizing temperature is about 180℃. The growth mechanism of the nano silicon fibre is vapour solid mode.
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