采用直流对靶磁控溅射低价态氧化钒(VO2-x)薄膜再附加热氧化处理的方式,进行具有金属-半导体相变特性氧化钒薄膜的制备.采用X射线光电子能谱(XPS)、X射线衍射(XRD)和原子力显微镜(AFM)对薄膜中钒的价态与组分、薄膜结晶结构和表面微观形貌进行分析,利用热敏感系统对薄膜的电阻温度特性进行测量.结果表明:新制备的低价态氧化钒薄膜以V2O3和VO为主,经过300℃低温热氧化处理后,薄膜中出现单斜金红石结构的VO2相,薄膜具有金属-半导体相变特性;薄膜表面颗粒之间存在间隙,利于氧的渗入:在300～320℃进行热处理时,薄膜中的V2O3和VO向单斜结构的VO2转变,VO2含量增加,随着薄膜内VO2含量的增加,薄膜的金属-半导体相变幅度增大,超过2个数量级,相变性能变好,但是此热处理温度区间对已获得的VO2的结构没有影响.同时利用直流对靶磁控溅射方法还可以在低氧化温度下获得具有优异金属-半导体相变特性的氧化钒薄膜,制备工艺与微机械电子系统(MEMS)工艺相兼容.
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