中子辐照剂量对直拉硅中VO退火行为的影响

硅酸盐通报 , 2013, 32(2): 352-355.

中子辐照剂量对直拉硅中VO退火行为的影响

杨帅 ^1, , 邓晓冉 ^2, , 徐建萍 ^3, , 陈贵锋 ^4, , 张辉 ^5,

1.天津理工大学理学院,天津300384;天津理工大学材料科学与工程学院,天津300384

2.天津职业技术师范大学理学院,天津300222

3.天津理工大学理学院,天津300384;天津理工大学材料科学与工程学院,天津300384

4.河北工业大学材料科学与工程学院,天津300131

5.河北工业大学材料科学与工程学院,天津300131

基金项目: 河北省教育厅科研计划(2009318) 国家自然科学基金(50872028,10904109)

关键词：直拉硅 , 中子辐照 , 缺陷 , A中心

The Influence of Neutron Dose on the Annealing of VO in Czochralski Silicon

本文通过红外吸收光谱技术研究了不同剂量快中子辐照直拉硅中空位氧缺陷(A中心)的退火行为.实验发现,经200℃热处理后样品中均会出现V2O (840 cm-1)和VO2 (919.6 cm-1)的红外吸收峰；当退火温度升高到400至450℃之间,在低剂量辐照样品(SL)的红外吸收光谱中会有较强的VO2 (889 cm-1)的吸收峰,而在高剂量辐照样品(SH)中则会有较强的V2O2(825 cm-1)和VO2(919.6 cm-1)的吸收峰.分析认为,在低剂量辐照样品中VO主要是通过与Oi结合形成稳定的VO2而消失；而在高剂量辐照条件下VO则是通过相互结合形成V2O2或与Oi结合形成VO2而消失.

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