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Si-rich SiO2 films were deposited on p-Si substrates using the magnetron sputtering technique and then implanted by Si, Ge or Ar ions. Electroluminescence (EL) was observed from the semitransparent Au film/ion-implanted Si-rich SiO2/p-Si diodes with the ion-implanted Si-rich SiO2/p-Si annealed at 1050 degreesC. In comparison with the A u/non-implanted Si-rich SiO2/p-Si diode, whose EL spectrum has a main peak at 1.8 eV and a shoulder at 2.4 eV, the Au/Si-implanted Si-rich SiO2/p-Si diode has an EL spectrum with the 1.8 and 2.4 eV peaks enhanced in intensity by factors of 2 and 8, respectively. Both EL spectra of Au/Ge-implanted Si-rich SiO2/p-Si diode Au/Ar-implanted Si-rich SiO2/p-Si diode have new strong peaks at 2.2 eV. The mechanisms for EL intensity enhancement and appearance of new EL peaks caused by ion-implantation are discussed. (C) 2001 Elsevier Science B.V. All rights reserved.